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Your search returned 25 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 2002 Volume number : 49 Issue: 04 |
Demonstration Of Low-Knee Voltage High-Breakdown Gainp Double Heterojunction Bipolar Transistors Using Novel Compound Collector Design
(Article)
Subject:
Compound Semiconductor Devices
Author:
P J
Zampardi
page:
540
-
543
Effect Of Dead Space On Avalanche Speed
(Article)
Subject:
Optoelectronics, Displays And Imaging
Author:
J S
Ng
page:
544
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549
Study Of The Color Detection Of A-Si:H By Transient Response In The Visible Range
(Article)
Subject:
Optoelectronics
,
Optoelectronics, Displays And Imaging
Author:
V
Gradisnik
page:
550
-
556
Electroluminescent Devices Using A High-Temperature Stable Gan-Based Phosphor And Thick-Film Dielectric Layer
(Article)
Subject:
Optoelectronics, Displays And Imaging
Author:
J
Heikenfeld
page:
557
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563
Characterization Of The Novel Polysilicon Tft With A Subgate Coupling Structure
(Article)
Subject:
Silicon Devices
Author:
K M
Chang
page:
564
-
567
Inverse Modeling Of Sub-100 Nm Mosfets Using I-V And C-V
(Article)
Subject:
Silicon Devices
Author:
I J
Djomehri
page:
568
-
575
Floating-Island Tft Leakage Caused By Proces Step Reduction
(Article)
Subject:
Silicon Devices
Author:
T
Tsujimura
page:
576
-
583
Excellent Cross-Talk Isolation, High-Q Inductors, And Reduced Self-Heating In A Tfsoi Technology For System-On-A-Chip Application
(Article)
Subject:
Silicon Devices
Author:
M. Jeya
Kumar
page:
584
-
589
Technology And Reliability Constrained Future Copper Interconnects-Part I: Resistance Modeling
(Article)
Subject:
Silicon Devices
Author:
P K
Kapur
page:
590
-
597
Technology And Reliability Constrained Future Copper Interconnects-Part Ii: Performance Implications
(Article)
Subject:
Silicon Devices
Author:
P K
Kapur
page:
598
-
604
An Anomalous Device Degradation Of Soi Narrow Width Devices Caused By Sti Edge Influence
(Article)
Subject:
Silicon Devices
Author:
J
Park
page:
605
-
612
Constant Charge Erasing Scheme For Flash Memories
(Article)
Subject:
Silicon Devices
Author:
A
Chimenton
page:
613
-
618
Macroscopie Simulation Of Quantum Mechanical Effects In Two-Dimensional Mos Devices Via The Density Gradient Method
(Article)
Subject:
Silicon Devices
Author:
D
Connelly
page:
619
-
626
Silicon Single-Electron Transistors With Sidewall Depletion Gates And Their Application To Dynamic Single-Electron Transistor Logic
(Article)
Subject:
Silicon Devices
Author:
D.
Kim
page:
627
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635
Hot Carrier-Induced Degration Of Gate Overlapped Lightly Doped Drain (Goldd) Polysilicon Tfts
(Article)
Subject:
Silicon Devices
Author:
A
Valletta
page:
636
-
642
The Design, Characterization, And Modeling Of Rf Ldmosfets On Silicon-On-Insulator Material
(Article)
Subject:
Silicon Devices
Author:
E
Mcshane
page:
643
-
651
Simulation Of Quantum Effects Along The Channel Of Ultrascaled Si-Based Mosfets
(Article)
Subject:
Solid-State Device Phenomena
Author:
W.
Chen
page:
652
-
657
Status And Prospects For Sic Power Mosfets
(Article)
Subject:
Solid-State Power And High Voltage
Author:
J A
Cooper
page:
658
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664
Fast-Switching And Shallow Saturation Bipolar Power Transistors Using Corrugated Base Junctions
(Article)
Subject:
Solid-State Power And High Voltage
Author:
C
Park
page:
673
-
678
Generalized Image Method With Application To The Thermal Modeling Of Poewr Devices And Circuits
(Article)
Subject:
Solid-State Power And High Voltage
Author:
N
Rinaldi
page:
679
-
686
Experimental Comparison Of Rf Power Ldmosfets On Thin-Film Soi And Bulk Silicon
(Article)
Subject:
Solid-State Power And High Voltage
Author:
J G
Fiorenza
page:
687
-
692
Effects Of Wave Function Penetration Into The Gate-Oxide On Self-Consistent Modeling Of Scaled Mosfets
(Article)
Subject:
Solid-State Power And High Voltage
Author:
M Z
Kauser
page:
693
-
694
Determination Of Deep Ultrathin Equivalent Oxide Thickness (Eot) From Measuring Flat-Band C-V Curve
(Article)
Subject:
Solid-State Power And High Voltage
Author:
C.-H.
Chen
page:
695
-
698
Study Of Silc And Interface Trap Generation Due To High Field Stressing And Its Operating Temperature Dependence In 2.2 Nm Gate Dielectrics
(Article)
Subject:
Trap Characterization In Semiconductors
,
Temperature
Author:
D G
Borse
page:
699
-
701
On The Transport Equations In Popular Commercial Device Simulators
(Article)
Subject:
Transport Systems
,
Commercial System
,
Simulation
Author:
M.E.
Levinshtein
page:
702
-
703
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