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Magazine Name : Ieee Transactions On Electron Devices

Year : 2002 Volume number : 49 Issue: 04

Demonstration Of Low-Knee Voltage High-Breakdown Gainp Double Heterojunction Bipolar Transistors Using Novel Compound Collector Design (Article)
Subject: Compound Semiconductor Devices
Author: P J Zampardi     
page:      540 - 543
Effect Of Dead Space On Avalanche Speed (Article)
Subject: Optoelectronics, Displays And Imaging
Author: J S Ng     
page:      544 - 549
Study Of The Color Detection Of A-Si:H By Transient Response In The Visible Range (Article)
Subject: Optoelectronics , Optoelectronics, Displays And Imaging
Author: V Gradisnik     
page:      550 - 556
Electroluminescent Devices Using A High-Temperature Stable Gan-Based Phosphor And Thick-Film Dielectric Layer (Article)
Subject: Optoelectronics, Displays And Imaging
Author: J Heikenfeld     
page:      557 - 563
Characterization Of The Novel Polysilicon Tft With A Subgate Coupling Structure (Article)
Subject: Silicon Devices
Author: K M Chang     
page:      564 - 567
Inverse Modeling Of Sub-100 Nm Mosfets Using I-V And C-V (Article)
Subject: Silicon Devices
Author: I J Djomehri     
page:      568 - 575
Floating-Island Tft Leakage Caused By Proces Step Reduction (Article)
Subject: Silicon Devices
Author: T Tsujimura     
page:      576 - 583
Excellent Cross-Talk Isolation, High-Q Inductors, And Reduced Self-Heating In A Tfsoi Technology For System-On-A-Chip Application (Article)
Subject: Silicon Devices
Author: M. Jeya Kumar     
page:      584 - 589
Technology And Reliability Constrained Future Copper Interconnects-Part I: Resistance Modeling (Article)
Subject: Silicon Devices
Author: P K Kapur     
page:      590 - 597
Technology And Reliability Constrained Future Copper Interconnects-Part Ii: Performance Implications (Article)
Subject: Silicon Devices
Author: P K Kapur     
page:      598 - 604
An Anomalous Device Degradation Of Soi Narrow Width Devices Caused By Sti Edge Influence (Article)
Subject: Silicon Devices
Author: J Park     
page:      605 - 612
Constant Charge Erasing Scheme For Flash Memories (Article)
Subject: Silicon Devices
Author: A Chimenton     
page:      613 - 618
Macroscopie Simulation Of Quantum Mechanical Effects In Two-Dimensional Mos Devices Via The Density Gradient Method (Article)
Subject: Silicon Devices
Author: D Connelly     
page:      619 - 626
Silicon Single-Electron Transistors With Sidewall Depletion Gates And Their Application To Dynamic Single-Electron Transistor Logic (Article)
Subject: Silicon Devices
Author: D. Kim     
page:      627 - 635
Hot Carrier-Induced Degration Of Gate Overlapped Lightly Doped Drain (Goldd) Polysilicon Tfts (Article)
Subject: Silicon Devices
Author: A Valletta     
page:      636 - 642
The Design, Characterization, And Modeling Of Rf Ldmosfets On Silicon-On-Insulator Material (Article)
Subject: Silicon Devices
Author: E Mcshane     
page:      643 - 651
Simulation Of Quantum Effects Along The Channel Of Ultrascaled Si-Based Mosfets (Article)
Subject: Solid-State Device Phenomena
Author: W. Chen     
page:      652 - 657
Status And Prospects For Sic Power Mosfets (Article)
Subject: Solid-State Power And High Voltage
Author: J A Cooper     
page:      658 - 664
Fast-Switching And Shallow Saturation Bipolar Power Transistors Using Corrugated Base Junctions (Article)
Subject: Solid-State Power And High Voltage
Author: C Park     
page:      673 - 678
Generalized Image Method With Application To The Thermal Modeling Of Poewr Devices And Circuits (Article)
Subject: Solid-State Power And High Voltage
Author: N Rinaldi     
page:      679 - 686
Experimental Comparison Of Rf Power Ldmosfets On Thin-Film Soi And Bulk Silicon (Article)
Subject: Solid-State Power And High Voltage
Author: J G Fiorenza     
page:      687 - 692
Effects Of Wave Function Penetration Into The Gate-Oxide On Self-Consistent Modeling Of Scaled Mosfets (Article)
Subject: Solid-State Power And High Voltage
Author: M Z Kauser     
page:      693 - 694
Determination Of Deep Ultrathin Equivalent Oxide Thickness (Eot) From Measuring Flat-Band C-V Curve (Article)
Subject: Solid-State Power And High Voltage
Author: C.-H. Chen     
page:      695 - 698
Study Of Silc And Interface Trap Generation Due To High Field Stressing And Its Operating Temperature Dependence In 2.2 Nm Gate Dielectrics (Article)
Subject: Trap Characterization In Semiconductors , Temperature
Author: D G Borse     
page:      699 - 701
On The Transport Equations In Popular Commercial Device Simulators (Article)
Subject: Transport Systems , Commercial System , Simulation
Author: M.E. Levinshtein     
page:      702 - 703